Temperature dependence of contact resistance of Au Ti Pd2Si n+-Si ohmic contacts / Belyaev, A. E., Boltovets, N. S., Konakova, R. V., Kudryk, Ya. Ya., Sachenko, A. V., Sheremet, V. N. (2010)
web address of the page http://jnas.nbuv.gov.ua/article/UJRN-0000349392
Semiconductor Physics, Quantum Electronics and Optoelectronics    А - 2019 /  Issue (2010, Vol. 13, № 4)
Belyaev A. E., Boltovets N. S., Konakova R. V., Kudryk Ya. Ya., Sachenko A. V., Sheremet V. N.
Temperature dependence of contact resistance of Au Ti Pd2Si n+-Si ohmic contacts
Cite:
Belyaev, A. E., Boltovets, N. S., Konakova, R. V., Kudryk, Ya. Ya., Sachenko, A. V., Sheremet, V. N. (2010). Temperature dependence of contact resistance of Au Ti Pd2Si n+-Si ohmic contacts. Semiconductor Physics, Quantum Electronics and Optoelectronics , 13 (4), 436-438. http://jnas.nbuv.gov.ua/article/UJRN-0000349392 | |
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