Influence of -irradiation (60So) on the concentration and mobility of carriers in Ge and Si single crystals of n-type / Gaidar, G. P. (2012)
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web address of the page http://jnas.nbuv.gov.ua/article/UJRN-0000350282
  Semiconductor Physics, Quantum Electronics and Optoelectronics        А - 2019  /     Issue (2012, Vol. 15, № 1)

Gaidar G. P.
Influence of -irradiation (60Со) on the concentration and mobility of carriers in Ge and Si single crystals of n-type

Cite:
Gaidar, G. P. (2012). Influence of -irradiation (60So) on the concentration and mobility of carriers in Ge and Si single crystals of n-type. Semiconductor Physics, Quantum Electronics and Optoelectronics , 15 (1), 26-31. http://jnas.nbuv.gov.ua/article/UJRN-0000350282

 

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