Peculiarities of valence band formation in As-Ge-Se semiconductor glasses / Vakiv, M., Golovchak, R., Chalyy, D., Shpotyuk, M., Ubizskii, S., Shpotyuk, O. (2012)
web address of the page http://jnas.nbuv.gov.ua/article/UJRN-0000350283
Semiconductor Physics, Quantum Electronics and Optoelectronics    А - 2019 /  Issue (2012, Vol. 15, № 1)
Vakiv M., Golovchak R., Chalyy D., Shpotyuk M., Ubizskii S., Shpotyuk O.
Peculiarities of valence band formation in As-Ge-Se semiconductor glasses
Cite:
Vakiv, M., Golovchak, R., Chalyy, D., Shpotyuk, M., Ubizskii, S., Shpotyuk, O. (2012). Peculiarities of valence band formation in As-Ge-Se semiconductor glasses. Semiconductor Physics, Quantum Electronics and Optoelectronics , 15 (1), 32-35. http://jnas.nbuv.gov.ua/article/UJRN-0000350283 | |
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