Properties of the crystalline silicon strained via cavitation impact / Savkina, R. K. (2013)
UkrainianEnglish

web address of the page http://jnas.nbuv.gov.ua/article/UJRN-0000350490
  Semiconductor Physics, Quantum Electronics and Optoelectronics        А - 2019  /     Issue (2013, Vol. 16, № 1)

Savkina R. K.
Properties of the crystalline silicon strained via cavitation impact

Cite:
Savkina, R. K. (2013). Properties of the crystalline silicon strained via cavitation impact. Semiconductor Physics, Quantum Electronics and Optoelectronics , 16 (1), 43-47. http://jnas.nbuv.gov.ua/article/UJRN-0000350490

 

Institute of Information Technologies of VNLU

+38 (044) 525-36-24
libnas@nbuv.gov.ua
Ukraine, 03039, Kyiv, Holosiivskyi Ave, 3, room 209