Properties of the crystalline silicon strained via cavitation impact / Savkina, R. K. (2013)
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web address of the page https://jnas.nbuv.gov.ua/article/UJRN-0000350490
  Semiconductor Physics, Quantum Electronics and Optoelectronics        А - 2019  /     Issue (2013, Vol. 16, № 1)

Savkina R. K.
Properties of the crystalline silicon strained via cavitation impact

Cite:
Savkina, R. K. (2013). Properties of the crystalline silicon strained via cavitation impact. Semiconductor Physics, Quantum Electronics and Optoelectronics , 16 (1), 43-47. https://jnas.nbuv.gov.ua/article/UJRN-0000350490