Study of recombination and electric properties of p-Si crystals irradiated with electrons / Pagava, T. A., Khocholava, D. Z., Maisuradze, N. I., Chkhartishvili, L. S. (2012)
web address of the page http://jnas.nbuv.gov.ua/article/UJRN-0000678438
Ukrainian journal of physics   А - 2018 /  Issue (2012, Vol. 57, № 5)
Pagava T. A., Khocholava D. Z., Maisuradze N. I., Chkhartishvili L. S.
Study of recombination and electric properties of p-Si crystals irradiated with electrons
Cite:
Pagava, T. A., Khocholava, D. Z., Maisuradze, N. I., Chkhartishvili, L. S. (2012). Study of recombination and electric properties of p-Si crystals irradiated with electrons. Ukrainian journal of physics, 57 (5), 525-530. http://jnas.nbuv.gov.ua/article/UJRN-0000678438 | |
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