Effects of the real-space transfer of charge carriers in the n-AlGaAs/GaAs heterostructures with the delta-layers of impurity in the barriers / Vainberg, V. V., Pylypchuk, A. S., Poroshin, V. N., Sarbey, O. G. (2014)
web address of the page http://jnas.nbuv.gov.ua/article/UJRN-0000696136
Ukrainian journal of physics   А - 2018 /  Issue (2014, Vol. 59, № 7)
Vainberg V. V., Pylypchuk A. S., Poroshin V. N., Sarbey O. G.
Effects of the real-space transfer of charge carriers in the n-AlGaAs/GaAs heterostructures with the delta-layers of impurity in the barriers
Cite:
Vainberg, V. V., Pylypchuk, A. S., Poroshin, V. N., Sarbey, O. G. (2014). Effects of the real-space transfer of charge carriers in the n-AlGaAs/GaAs heterostructures with the delta-layers of impurity in the barriers. Ukrainian journal of physics, 59 (7), 721-725. http://jnas.nbuv.gov.ua/article/UJRN-0000696136 | |
|
|
PDF