Physical mechanisms and models of long-term transformations of radiative recombination in n-GaAs due to the magnetic field treatments / Milenin, G. V., Redko, R. A. (2016)
UkrainianEnglish

web address of the page http://jnas.nbuv.gov.ua/article/UJRN-0000714377
  Semiconductor Physics, Quantum Electronics and Optoelectronics        А - 2019  /     Issue (2016, Vol. 19, № 3)

Milenin G. V., Red'ko R. A.
Physical mechanisms and models of long-term transformations of radiative recombination in n-GaAs due to the magnetic field treatments

Cite:
Milenin, G. V., Redko, R. A. (2016). Physical mechanisms and models of long-term transformations of radiative recombination in n-GaAs due to the magnetic field treatments. Semiconductor Physics, Quantum Electronics and Optoelectronics , 19 (3), 279-284. http://jnas.nbuv.gov.ua/article/UJRN-0000714377

 

Institute of Information Technologies of VNLU

+38 (044) 525-36-24
libnas@nbuv.gov.ua
Ukraine, 03039, Kyiv, Holosiivskyi Ave, 3, room 209