Influence of changes in defect states on the properties of Si–Gd–O photocathode / Melnyk, P. V., Nakhodkin, M. G., Fedorchenko, M. I. (2017)
web address of the page http://jnas.nbuv.gov.ua/article/UJRN-0000773491
Ukrainian journal of physics   А - 2018 /  Issue (2017, Vol. 62, № 8)
Mel'nyk P. V., Nakhodkin M. G., Fedorchenko M. I.
Influence of changes in defect states on the properties of Si–Gd–O photocathode
Cite:
Melnyk, P. V., Nakhodkin, M. G., Fedorchenko, M. I. (2017). Influence of changes in defect states on the properties of Si–Gd–O photocathode. Ukrainian journal of physics, 62 (8), 692-698. http://jnas.nbuv.gov.ua/article/UJRN-0000773491 | |
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