Calculation of spin-Hamiltonian constants for extended defects (VSi-VC)0 (Ky5) in silicon carbide polytype 3C-SiC / Shanina, B. D., Bratus, V. Ya. (2018)
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web address of the page http://jnas.nbuv.gov.ua/article/UJRN-0000923033
  Semiconductor Physics, Quantum Electronics and Optoelectronics        А - 2019  /     Issue (2018, Vol. 21, № 3)

Shanina B. D., Bratus V. Ya.
Calculation of spin-Hamiltonian constants for extended defects (VSi-VC)0 (Ky5) in silicon carbide polytype 3C-SiC

Cite:
Shanina, B. D., Bratus, V. Ya. (2018). Calculation of spin-Hamiltonian constants for extended defects (VSi-VC)0 (Ky5) in silicon carbide polytype 3C-SiC . Semiconductor Physics, Quantum Electronics and Optoelectronics , 21 (3), 225-230. http://jnas.nbuv.gov.ua/article/UJRN-0000923033

 

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