Combination of thermionic emission and tunneling mechanisms to analyze the leakage current in 4H-SiC Schottky barrier diodes / Latreche, A. (2019)
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web address of the page http://jnas.nbuv.gov.ua/article/UJRN-0001000431
  Semiconductor Physics, Quantum Electronics and Optoelectronics        А - 2019  /     Issue (2019, Vol. 22, № 1)

Latreche A.
Combination of thermionic emission and tunneling mechanisms to analyze the leakage current in 4H-SiC Schottky barrier diodes

Cite:
Latreche, A. (2019). Combination of thermionic emission and tunneling mechanisms to analyze the leakage current in 4H-SiC Schottky barrier diodes. Semiconductor Physics, Quantum Electronics and Optoelectronics , 22 (1), 19-25. http://jnas.nbuv.gov.ua/article/UJRN-0001000431

 

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