Peculiarities of study of Au–Ti–Pd–n+-n-n+-Si multilayer contact structure to avalanche transit-time diodes / Romanets, P. M., Konakova, R. V., Boltovets, M. S., Basanets, V. V., Kudryk, Ya. Ya., Slipokurov, V. S. (2019)
web address of the page http://jnas.nbuv.gov.ua/article/UJRN-0001000433
Semiconductor Physics, Quantum Electronics and Optoelectronics    А - 2019 /  Issue (2019, Vol. 22, № 1)
Romanets P. M., Konakova R. V., Boltovets M. S., Basanets V. V., Kudryk Ya. Ya., Slipokurov V. S.
Peculiarities of study of Au–Ti–Pd–n+-n-n+-Si multilayer contact structure to avalanche transit-time diodes
Cite:
Romanets, P. M., Konakova, R. V., Boltovets, M. S., Basanets, V. V., Kudryk, Ya. Ya., Slipokurov, V. S. (2019). Peculiarities of study of Au–Ti–Pd–n+-n-n+-Si multilayer contact structure to avalanche transit-time diodes. Semiconductor Physics, Quantum Electronics and Optoelectronics , 22 (1), 34-38. http://jnas.nbuv.gov.ua/article/UJRN-0001000433 | |
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