Formation of nanocrystals and their properties during tin induced and laser light stimulated crystallization of amorphous silicon / Neimash, V. B., Nikolenko, A. S., Strelchuk, V. V., Shepeliavyi, P. Ye., Litvinchuk, P. M., Melnyk, V. V., Olhovik, I. V. (2019)
web address of the page http://jnas.nbuv.gov.ua/article/UJRN-0001073625 Semiconductor Physics, Quantum Electronics and Optoelectronics А - 2019 / Issue (2019, Vol. 22, № 2)
Neimash V. B., Nikolenko A. S., Strelchuk V. V., Shepeliavyi P. Ye., Litvinchuk P. M., Melnyk V. V., Olhovik I. V. Formation of nanocrystals and their properties during tin induced and laser light stimulated crystallization of amorphous silicon
Cite: Neimash, V. B., Nikolenko, A. S., Strelchuk, V. V., Shepeliavyi, P. Ye., Litvinchuk, P. M., Melnyk, V. V., Olhovik, I. V. (2019). Formation of nanocrystals and their properties during tin induced and laser light stimulated crystallization of amorphous silicon. Semiconductor Physics, Quantum Electronics and Optoelectronics , 22 (2), 206-214. http://jnas.nbuv.gov.ua/article/UJRN-0001073625 |
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