Pseudopotential-based study of electrical transport properties inherent to Bi-Ga alloys / Vora, A. M. (2019)
UkrainianEnglish

web address of the page http://jnas.nbuv.gov.ua/article/UJRN-0001073663
  Semiconductor Physics, Quantum Electronics and Optoelectronics        А - 2019  /     Issue (2019, Vol. 22, № 3)

Vora A. M.
Pseudopotential-based study of electrical transport properties inherent to Bi-Ga alloys

Cite:
Vora, A. M. (2019). Pseudopotential-based study of electrical transport properties inherent to Bi-Ga alloys. Semiconductor Physics, Quantum Electronics and Optoelectronics , 22 (3), 323-325. http://jnas.nbuv.gov.ua/article/UJRN-0001073663

 

Institute of Information Technologies of VNLU

+38 (044) 525-36-24
libnas@nbuv.gov.ua
Ukraine, 03039, Kyiv, Holosiivskyi Ave, 3, room 209