Conduction mechanisms of the reverse leakage current of β-Ga2O3 Schottky barrier diodes / Latreche, A. (2019)
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web address of the page http://jnas.nbuv.gov.ua/article/UJRN-0001073938
  Semiconductor Physics, Quantum Electronics and Optoelectronics        А - 2019  /     Issue (2019, Vol. 22, № 4)

Latreche A.
Conduction mechanisms of the reverse leakage current of β-Ga2O3 Schottky barrier diodes

Cite:
Latreche, A. (2019). Conduction mechanisms of the reverse leakage current of β-Ga2O3 Schottky barrier diodes. Semiconductor Physics, Quantum Electronics and Optoelectronics , 22 (4), 397-403. http://jnas.nbuv.gov.ua/article/UJRN-0001073938

 

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