Simulation of the Charge Carriers Distribution in the Active Region of the p-i-n-diodes by the Perturbation Theory Methods / Bomba, A. Ya., Moroz, I. P. (2021)
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web address of the page http://jnas.nbuv.gov.ua/article/UJRN-0001384228
  Mathematical and computer modelling. Series: Technical sciences  Б - 2020  /     Issue (2021, Вип. 22)

Bomba A. Ya., Moroz I. P.
Simulation of the Charge Carriers Distribution in the Active Region of the p-i-n-diodes by the Perturbation Theory Methods

Cite:
Bomba, A. Ya., Moroz, I. P. (2021). Simulation of the Charge Carriers Distribution in the Active Region of the p-i-n-diodes by the Perturbation Theory Methods. Mathematical and computer modelling. Series: Technical sciences, 22, 20-30. http://jnas.nbuv.gov.ua/article/UJRN-0001384228

 

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