Theory of high-field electron transport in the heterostructures AlxGa1-xAs/GaAs/AlxGa1-x with delta-doped barriers. Effect of real-space transfer / Korotyeyev V. V. (2015)
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інтернет-адреса сторінки: http://jnas.nbuv.gov.ua/article/UJRN-0000353225
  Semiconductor physics, quantum electronics & optoelectronics       А - 2019  /     Випуск (2015, Vol. 18, № 1)

Korotyeyev V. V.
Theory of high-field electron transport in the heterostructures AlxGa1-xAs/GaAs/AlxGa1-x with delta-doped barriers. Effect of real-space transfer

Cite:
Korotyeyev, V. V. (2015). Theory of high-field electron transport in the heterostructures AlxGa1-xAs/GaAs/AlxGa1-x with delta-doped barriers. Effect of real-space transfer. Semiconductor Physics, Quantum Electronics and Optoelectronics , 18 (1), 1-11. http://jnas.nbuv.gov.ua/article/UJRN-0000353225

 

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