Ukrainian journal of physics. 2015, 60 (2) АРХІВ (Всі випуски) 
 | Ukrainian journal of physics
2015. Вип. 2 |
- Title.
- Contents.
- Nakhodkin M. G., Fedorchenko M. I. Interaction of oxygen and gadolinium with Si(100)-2 × 1 surface. Formation of a system with 1-eV work function. - C. 97-103.
- Prokopenko O. V. Microwave signal sources based on spin-torque nano-oscillators. - C. 104-113.
- Sizov F. Uncooled wide-range spectral optoelectronic devices on the base of HgCdTe semiconductor. - C. 114-119.
- Sologub S. V., Bordenjuk I. V., Tegenkamp C., Pfnür H. Surface scattering of charge carriers and surface electronic states. - C. 120-129.
- Afanasieva T. V. Study of the interaction of atoms of the IV- and V-th groups with Si(001) and Ge(001) surfaces. - C. 130-140.
- Voskoboynikov O. Broken reflection symmetry and diamagnetic coefficient of carriers confined in semiconductor lateral quantum dot molecules. - C. 141-147.
- Goriachko A., Kulyk S. P., Melnik P. V., Nakhodkin M. G. Scanning tunneling microscopy investigation of the Si(001)-c(8 × 8) nanostructured surface. - C. 148-152.
- Lopatina Ya. Yu., Senenko А. I., Мarchenko А. А., Naumovets А. G. Self-organization of long-chain aliphatic molecules and their derivatives on atomically flat surfaces. - C. 153-159.
- Lyubinetsky I. V. Key role of M.G. Nakhodkin’s insight and inspiration in development of UHV STM-related techniques and methods. - C. 160-164.
- Nakhodkin N. G., Rodionova T. V., Sutyagina A. S. Mechanisms of surface evolution during the growth of undoped nanosilicon films. - C. 165-169.
- Repetsky S. P., Tretiak O. V., Vyshivanaya I. G. Electron structure and electric conductivity of graphene with a nitrogen impurity. - C. 170-174.
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