Electro-optic effect in GaN/Al0. 15Ga0. 85N single quantum wells for optical switch / Elkadadra, A., Abouelaoualim, D., Oueriagli, A., Outzourhit, A. (2010)
web address of the page http://jnas.nbuv.gov.ua/article/UJRN-0000349330
Semiconductor Physics, Quantum Electronics and Optoelectronics    А - 2019 /  Issue (2010, Vol. 13, № 3)
Elkadadra A., Abouelaoualim D., Oueriagli A., Outzourhit A.
Electro-optic effect in GaN/Al0. 15Ga0. 85N single quantum wells for optical switch
Cite:
Elkadadra, A., Abouelaoualim, D., Oueriagli, A., Outzourhit, A. (2010). Electro-optic effect in GaN/Al0. 15Ga0. 85N single quantum wells for optical switch. Semiconductor Physics, Quantum Electronics and Optoelectronics , 13 (3), 321-325. http://jnas.nbuv.gov.ua/article/UJRN-0000349330 | |
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