Semiconductor physics, quantum electronics & optoelectronics. 2010, 13 (3) АРХІВ (Всі випуски)
| Semiconductor physics, quantum electronics & optoelectronics 2010. Вип. 3 |
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- Content.
- Lendel V. V., Lomakina O. V., Mel'nychenko L. Yu., Shaykevich I. A. Optical properties of thin films of titanium with transient layers on them. - C. 231-234.
- Bushma A. V. Increase of data protection level for visual information in control systems. - C. 235-239 .
- Ushenko Yu. O., Istratiy V. V., Balanets'ka V. O., Kvasniyk D. O., Bachinsky V. T., Olar O. I. Phase maps for networks of polycrystalline human biological liquids: Statistical and fractal analyses. - C. 240-247 .
- Ushenko Yu. O., Misevich I. Z., Angelsky A. P., Bachinsky V. T., Telen'ga O. Yu., Olar O. I. Polarization-singular structure in laser images of phase-inhomogeneous layers to diagnose and classify their optical properties. - C. 248-258 Mumimov R. A., Kanyazov Sh. K., Saymbetov A. K..
- Mumimov R. A., Kanyazov Sh. K., Saymbetov A. K. Relaxation process features of photoconductivity in p-i-n structures. - C. 259-261.
- Fodchuk I., Balovsyak S., Borcha M., Garabazhiv Ya., Tkach V. Determination of structural homogeneity of synthetic diamonds from analysis of Kikuchi lines intensity distribution. - C. 262-267 .
- Novіkov S. M., Fodchuk І. M., Fedortsov D. G., Struk A. Ya. Calculated images of dislocations in crystals on section topograms . - C. 268-272.
- Chernenko V. V. Peculiarities of the influence of high- and low-energy proton and electron irradiations on the characteristics of silicon solar cells. - C. 273-275 .
- Tolmachov I. D., Stronski A. V., Vlcek M. Optical properties and structure of As-Ge-Se thin films. - C. 276-279.
- Agabekov V. E., Ivanova N. A., Kosmacheva T. G., Dlugunovich V. A., Tsaruk A. V. Scattering and birefringence properties of polymeric films modified by nanoparticles of different nature. - C. 280-285.
- Muravsky A., Agabekov V., Ariko N., Shachab S., Tolstik A., Malashko P. New dyes for guest-host mode. - C. 286-289.
- Andreev A., Andreeva T., Kompanets I. Low voltage FLC for fast active matrix displays. - C. 290-293.
- Hubarevich A., Jaguiro P., Mukha Y., Smirnov A., Solovjov Ya. Sponge like nanostructured silicon for integrated light emitters. - C. 294-297.
- Jaguiro P., Stsiapanau A., Smirnov A. Chemiluminescence display. - C. 298-301.
- Javidi S., Esmaeil Nia M., Ali Akbari N. Growth of a KDP (KH2PO4) twin crystal and comparison of its characteristicswith a single crystal. - C. 302-204.
- Jaguiro P., Stsiapanau A., Hubarevich A., Mukha Y., Smirnov A. Self-organized nanostructured anodic oxides for displays applications. - C. 305-308.
- Strelchuk V. V., Budzulyak S. I., Budzulyak I. M., Ilnytsyy R. V., Kotsyubynskyy V. O., Segin M. Ya., Yablon L. S. Raman spectroscopy of the laser irradiated titanium dioxide. - C. 309-313.
- Venger E. F., Ievtushenko A. I., Melnichuk L. Yu., Melnichuk O. V. Effect of strong magnetic field on surface polaritons in ZnO. - C. 314-320.
- Elkadadra A., Abouelaoualim D., Oueriagli A., Outzourhit A. Electro-optic effect in GaN/Al0. 15Ga0. 85N single quantum wells for optical switch. - C. 321-325.
- Lyashenko O. V., Vlasenko A. I., Veleschuk V. P., Kisseluk M. P. Acoustic-emission method of control of defects-formation process in light-emitting structures. - C. 326-329.
- Milenin V. V., Red'ko R. A. Defect reorganization induced by pulsed magnetic field in porous InP. - C. 330-333.
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