Electrophysical properties of meso-porous silicon free standing films modified with palladium / Manilov, A. I., Skryshevsky, V. A., Alekseev, S. A., Kuznetsov, G. V. (2011)
web address of the page http://jnas.nbuv.gov.ua/article/UJRN-0000349422
Semiconductor Physics, Quantum Electronics and Optoelectronics    А - 2019 /  Issue (2011, Vol. 14, № 1)
Manilov A. I., Skryshevsky V. A., Alekseev S. A., Kuznetsov G. V.
Electrophysical properties of meso-porous silicon free standing films modified with palladium
Cite:
Manilov, A. I., Skryshevsky, V. A., Alekseev, S. A., Kuznetsov, G. V. (2011). Electrophysical properties of meso-porous silicon free standing films modified with palladium. Semiconductor Physics, Quantum Electronics and Optoelectronics , 14 (1), 1-6. http://jnas.nbuv.gov.ua/article/UJRN-0000349422 | |
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