Peculiariries of thermoannealing in n-Si and n-Ge crystals with oxygen impurity / Baranskii, P. I., Gaidar, G. P. (2012)
web address of the page http://jnas.nbuv.gov.ua/article/UJRN-0000350247
Semiconductor Physics, Quantum Electronics and Optoelectronics    А - 2019 /  Issue (2012, Vol. 15, № 3)
Baranskii P. I., Gaidar G. P.
Peculiariries of thermoannealing in n-Si and n-Ge crystals with oxygen impurity
Cite:
Baranskii, P. I., Gaidar, G. P. (2012). Peculiariries of thermoannealing in n-Si and n-Ge crystals with oxygen impurity. Semiconductor Physics, Quantum Electronics and Optoelectronics , 15 (3), 218-222. http://jnas.nbuv.gov.ua/article/UJRN-0000350247 | |
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