Interface features of SiO2/SiC heterostructures according to methods for producing the SiO2 thin films / Bacherikov, Yu. Yu., Boltovets, N. S., Konakova, R. V., Kolyadina, E. Yu., Lednova, T. M., Okhrimenko, O. B. (2012)
web address of the page http://jnas.nbuv.gov.ua/article/UJRN-0000350279
Semiconductor Physics, Quantum Electronics and Optoelectronics    А - 2019 /  Issue (2012, Vol. 15, № 1)
Bacherikov Yu. Yu., Boltovets N. S., Konakova R. V., Kolyadina E. Yu., Ledn'ova T. M., Okhrimenko O. B.
Interface features of SiO2/SiC heterostructures according to methods for producing the SiO2 thin films
Cite:
Bacherikov, Yu. Yu., Boltovets, N. S., Konakova, R. V., Kolyadina, E. Yu., Lednova, T. M., Okhrimenko, O. B. (2012). Interface features of SiO2/SiC heterostructures according to methods for producing the SiO2 thin films. Semiconductor Physics, Quantum Electronics and Optoelectronics , 15 (1), 13-16. http://jnas.nbuv.gov.ua/article/UJRN-0000350279 | |
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