Contribution of f- and g- transitions to electron intervalley scattering of n-Si at temperatures 300 to 450 K / Ermakov, V. M., Kolomoets, V. V., Panasyuk, L. I., Nazarchuk, P. F., Yashchynskyi, L. V. (2012)
web address of the page http://jnas.nbuv.gov.ua/article/UJRN-0000350293
Semiconductor Physics, Quantum Electronics and Optoelectronics    А - 2019 /  Issue (2012, Vol. 15, № 1)
Ermakov V. M., Kolomoets V. V., Panasyuk L. I., Nazarchuk P. F., Yashchynskyi L. V.
Contribution of f- and g- transitions to electron intervalley scattering of n-Si at temperatures 300 to 450 K
Cite:
Ermakov, V. M., Kolomoets, V. V., Panasyuk, L. I., Nazarchuk, P. F., Yashchynskyi, L. V. (2012). Contribution of f- and g- transitions to electron intervalley scattering of n-Si at temperatures 300 to 450 K. Semiconductor Physics, Quantum Electronics and Optoelectronics , 15 (1), 77-79. http://jnas.nbuv.gov.ua/article/UJRN-0000350293 | |
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