Magnetic force microscopy of YLaFeO films implanted by high dose of nitrogen ions / Fodchuk, I. M., Gutsuliak, I. I., Zaplitniy, R. A., Balovsyak, S. V., Yaremiy, I. P., Bonchyk, O. Yu., Savitskiy, G. V., Syvorotka, I. M., Lytvyn, P. M. (2013)
web address of the page http://jnas.nbuv.gov.ua/article/UJRN-0000352308
Semiconductor Physics, Quantum Electronics and Optoelectronics    А - 2019 /  Issue (2013, Vol. 16, № 3)
Fodchuk I. M., Gutsuliak I. I., Zaplitniy R. A., Balovsyak S. V., Yaremiy I. P., Bonchyk O. Yu., Savitskiy G. V., Syvorotka I. M., Lytvyn P. M.
Magnetic force microscopy of YLaFeO films implanted by high dose of nitrogen ions
Cite:
Fodchuk, I. M., Gutsuliak, I. I., Zaplitniy, R. A., Balovsyak, S. V., Yaremiy, I. P., Bonchyk, O. Yu., Savitskiy, G. V., Syvorotka, I. M., Lytvyn, P. M. (2013). Magnetic force microscopy of YLaFeO films implanted by high dose of nitrogen ions. Semiconductor Physics, Quantum Electronics and Optoelectronics , 16 (3), 246-252. http://jnas.nbuv.gov.ua/article/UJRN-0000352308 | |
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