X-ray diffraction investigation of GaN layers on Si(111) and Al2O3(0001) substrates / Safriuk, N. V., Stanchu, G. V., Kuchuk, A. V., Kladko, V. P., Belyaev, A. E., Machulin, V. F. (2013)
web address of the page http://jnas.nbuv.gov.ua/article/UJRN-0000352311
Semiconductor Physics, Quantum Electronics and Optoelectronics    А - 2019 /  Issue (2013, Vol. 16, № 3)
Safriuk N. V., Stanchu G. V., Kuchuk A. V., Kladko V. P., Belyaev A. E., Machulin V. F.
X-ray diffraction investigation of GaN layers on Si(111) and Al2O3(0001) substrates
Cite:
Safriuk, N. V., Stanchu, G. V., Kuchuk, A. V., Kladko, V. P., Belyaev, A. E., Machulin, V. F. (2013). X-ray diffraction investigation of GaN layers on Si(111) and Al2O3(0001) substrates. Semiconductor Physics, Quantum Electronics and Optoelectronics , 16 (3), 265-272. http://jnas.nbuv.gov.ua/article/UJRN-0000352311 | |
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