8H-, 10H-, 14H-SiC formation in 6H-3C silicon carbide phase transitions / Vlaskina, S. I., Mishinova, G. N., Vlaskin, V. I., Rodionov, V. E., Svechnikov, G. S. (2013)
web address of the page https://jnas.nbuv.gov.ua/article/UJRN-0000352312
Semiconductor Physics, Quantum Electronics and Optoelectronics    А - 2019 /  Issue (2013, Vol. 16, № 3)
Vlaskina S. I., Mishinova G. N., Vlaskin V. I., Rodionov V. E., Svechnikov G. S.
8H-, 10H-, 14H-SiC formation in 6H-3C silicon carbide phase transitions
Cite:
Vlaskina, S. I., Mishinova, G. N., Vlaskin, V. I., Rodionov, V. E., Svechnikov, G. S. (2013). 8H-, 10H-, 14H-SiC formation in 6H-3C silicon carbide phase transitions. Semiconductor Physics, Quantum Electronics and Optoelectronics , 16 (3), 273-279. https://jnas.nbuv.gov.ua/article/UJRN-0000352312 | |
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