Intrinsic concentration dependences in the HgCdTe quantum well in the range of the insulator-semimetal topological transition / Melezhik, E. O., Gumenjuk-Sichevska, J. V., Dvoretskii, S. A. (2014)
web address of the page http://jnas.nbuv.gov.ua/article/UJRN-0000352786
Semiconductor Physics, Quantum Electronics and Optoelectronics    А - 2019 /  Issue (2014, Vol. 17, № 2)
Melezhik E. O., Gumenjuk-Sichevska J. V., Dvoretskii S. A.
Intrinsic concentration dependences in the HgCdTe quantum well in the range of the insulator-semimetal topological transition
Cite:
Melezhik, E. O., Gumenjuk-Sichevska, J. V., Dvoretskii, S. A. (2014). Intrinsic concentration dependences in the HgCdTe quantum well in the range of the insulator-semimetal topological transition. Semiconductor Physics, Quantum Electronics and Optoelectronics , 17 (2), 179-183. http://jnas.nbuv.gov.ua/article/UJRN-0000352786 | |
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