Influence of complex defects on electrophysical properties of GaP light emitting diodes / Konoreva, O., Malyj, E., Mamykin, S., Petrenko, I., Pinkovska, M., Tartachnyk, V. (2014)
web address of the page http://jnas.nbuv.gov.ua/article/UJRN-0000352787
Semiconductor Physics, Quantum Electronics and Optoelectronics    А - 2019 /  Issue (2014, Vol. 17, № 2)
Konoreva O., Malyj E., Mamykin S., Petrenko I., Pinkovska M., Tartachnyk V.
Influence of complex defects on electrophysical properties of GaP light emitting diodes
Cite:
Konoreva, O., Malyj, E., Mamykin, S., Petrenko, I., Pinkovska, M., Tartachnyk, V. (2014). Influence of complex defects on electrophysical properties of GaP light emitting diodes. Semiconductor Physics, Quantum Electronics and Optoelectronics , 17 (2), 184-187. http://jnas.nbuv.gov.ua/article/UJRN-0000352787 | |
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