Temperature changes in the function of the shape inherent to the band of exciton absorption in nano-film of layered semiconductor / Derevyanchuk, A. V., Pugantseva, O. V., Kramar, V. M. (2014)
web address of the page http://jnas.nbuv.gov.ua/article/UJRN-0000352788
Semiconductor Physics, Quantum Electronics and Optoelectronics    А - 2019 /  Issue (2014, Vol. 17, № 2)
Derevyanchuk A. V., Pugantseva O. V., Kramar V. M.
Temperature changes in the function of the shape inherent to the band of exciton absorption in nano-film of layered semiconductor
Cite:
Derevyanchuk, A. V., Pugantseva, O. V., Kramar, V. M. (2014). Temperature changes in the function of the shape inherent to the band of exciton absorption in nano-film of layered semiconductor. Semiconductor Physics, Quantum Electronics and Optoelectronics , 17 (2), 188-192. http://jnas.nbuv.gov.ua/article/UJRN-0000352788 | |
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