Determination of the Schottky barrier height in diodes based on Au-TiB2-n-SiC 6H from the current-voltage and capacitance-voltage characteristics / Kudryk, Ya. Ya., Shynkarenko, V. V., Slipokurov, V. S., Bigun, R. I., Kudryk, R. Ya. (2014)
web address of the page http://jnas.nbuv.gov.ua/article/UJRN-0000353053
Semiconductor Physics, Quantum Electronics and Optoelectronics    А - 2019 /  Issue (2014, Vol. 17, № 4)
Kudryk Ya. Ya., Shynkarenko V. V., Slipokurov V. S., Bigun R. I., Kudryk R. Ya.
Determination of the Schottky barrier height in diodes based on Au-TiB2-n-SiC 6H from the current-voltage and capacitance-voltage characteristics
Cite:
Kudryk, Ya. Ya., Shynkarenko, V. V., Slipokurov, V. S., Bigun, R. I., Kudryk, R. Ya. (2014). Determination of the Schottky barrier height in diodes based on Au-TiB2-n-SiC 6H from the current-voltage and capacitance-voltage characteristics. Semiconductor Physics, Quantum Electronics and Optoelectronics , 17 (4), 398-402. http://jnas.nbuv.gov.ua/article/UJRN-0000353053 | |
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