Influence of trap states on the kinetics of luminescence and induced light absorption by Si nanoparticles in a SiO2 matrix at their excitation with femtosecond laser pulses / Kadan, V. M., Indutnyi, I. Z., Danko, V. A., Shepelyavyi, P. E., Dmitruk, I. M., Korenyuk, P. I., Blonsky, I. V. (2013)
web address of the page http://jnas.nbuv.gov.ua/article/UJRN-0000688084
Ukrainian journal of physics   А - 2018 /  Issue (2013, Vol. 58, № 1)
Kadan V. M., Indutnyi I. Z., Dan'ko V. A., Shepelyavyi P. E., Dmitruk I. M., Korenyuk P. I., Blonsky I. V.
Influence of trap states on the kinetics of luminescence and induced light absorption by Si nanoparticles in a SiO2 matrix at their excitation with femtosecond laser pulses
Cite:
Kadan, V. M., Indutnyi, I. Z., Danko, V. A., Shepelyavyi, P. E., Dmitruk, I. M., Korenyuk, P. I., Blonsky, I. V. (2013). Influence of trap states on the kinetics of luminescence and induced light absorption by Si nanoparticles in a SiO2 matrix at their excitation with femtosecond laser pulses. Ukrainian journal of physics, 58 (1), 20-25. http://jnas.nbuv.gov.ua/article/UJRN-0000688084 | |
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