Polarization memory of the luminescence related with Si nanoparticles embedded into oxide matrix / Michailovska, K. V., Indutnyi, I. Z., Kudryavtsev, O. O., Sopinskyy, M. V., Shepeliavyi, P. E. (2015)
web address of the page http://jnas.nbuv.gov.ua/article/UJRN-0000714282
Semiconductor Physics, Quantum Electronics and Optoelectronics    А - 2019 /  Issue (2015, Vol. 18, № 3)
Michailovska K. V., Indutnyi I. Z., Kudryavtsev O. O., Sopinskyy M. V., Shepeliavyi P. E.
Polarization memory of the luminescence related with Si nanoparticles embedded into oxide matrix
Cite:
Michailovska, K. V., Indutnyi, I. Z., Kudryavtsev, O. O., Sopinskyy, M. V., Shepeliavyi, P. E. (2015). Polarization memory of the luminescence related with Si nanoparticles embedded into oxide matrix. Semiconductor Physics, Quantum Electronics and Optoelectronics , 18 (3), 324-329. http://jnas.nbuv.gov.ua/article/UJRN-0000714282 | |
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