Effects of the real-space transfer of charge carriers in the n-AlGaAs/GaAs heterostructures with the delta-layers of impurity in the barriers / Vainberg, V. V., Pylypchuk, A. S., Poroshin, V. N., Sarbey, O. G. (2014)
web address of the page http://jnas.nbuv.gov.ua/article/UJRN-0000726345 Ukrainian Journal of Physics А - 2018 / Issue (2014, Т. 59, № 7)
Vainberg V. V., Pylypchuk A. S., Poroshin V. N., Sarbey O. G. Effects of the real-space transfer of charge carriers in the n-AlGaAs/GaAs heterostructures with the delta-layers of impurity in the barriers
Cite: Vainberg, V. V., Pylypchuk, A. S., Poroshin, V. N., Sarbey, O. G. (2014). Effects of the real-space transfer of charge carriers in the n-AlGaAs/GaAs heterostructures with the delta-layers of impurity in the barriers. Ukrainian Journal of Physics, 59 (7), 721-725. http://jnas.nbuv.gov.ua/article/UJRN-0000726345 |
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