Effect of doping in n-ZrNiSn intermetallic semiconductor with Bi donor impurity on thermoelectric power factor Z* / Romaka, V. A., Stadnyk, Yu. V., Rogl, P., Romaka, V. V., Hlil, E. K., Lakh, O. I., Horyn, A. M. (2012)
web address of the page http://jnas.nbuv.gov.ua/article/UJRN-0000753585
Journal of thermoelectricity  /  Issue (2012, № 2)
Romaka V. A., Stadnyk Yu. V., Rogl P., Romaka V. V., Hlil E. K., Lakh O. I., Horyn A. M.
Effect of doping in n-ZrNiSn intermetallic semiconductor with Bi donor impurity on thermoelectric power factor Z*
Cite:
Romaka, V. A., Stadnyk, Yu. V., Rogl, P., Romaka, V. V., Hlil, E. K., Lakh, O. I., Horyn, A. M. (2012). Effect of doping in n-ZrNiSn intermetallic semiconductor with Bi donor impurity on thermoelectric power factor Z*. Journal of thermoelectricity, 2, 50-57. http://jnas.nbuv.gov.ua/article/UJRN-0000753585 | |
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