New ZnO/Au/ZnO multilayer field effect transistor with extended gate as a sensing membrane / Rasheed, H. S., Ahmed Naser, M., Matjafri, M. Z. (2017)
web address of the page http://jnas.nbuv.gov.ua/article/UJRN-0000773492
Ukrainian journal of physics   А - 2018 /  Issue (2017, Vol. 62, № 8)
Rasheed H. S., Ahmed Naser M., Matjafri M. Z.
New ZnO/Au/ZnO multilayer field effect transistor with extended gate as a sensing membrane
Cite:
Rasheed, H. S., Ahmed Naser, M., Matjafri, M. Z. (2017). New ZnO/Au/ZnO multilayer field effect transistor with extended gate as a sensing membrane. Ukrainian journal of physics, 62 (8), 699-704. http://jnas.nbuv.gov.ua/article/UJRN-0000773492 | |
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