New ZnO/Au/ZnO multilayer field effect transistor with extended gate as a sensing membrane / Rasheed, H. S., Ahmed Naser, M., Matjafri, M. Z. (2017)
web address of the page http://jnas.nbuv.gov.ua/article/UJRN-0000774524
Ukrainian Journal of Physics   А - 2018 /  Issue (2017, Т. 62, № 8)
Rasheed H. S., Ahmed Naser M., Matjafri M. Z.
New ZnO/Au/ZnO multilayer field effect transistor with extended gate as a sensing membrane
Cite:
Rasheed, H. S., Ahmed Naser, M., Matjafri, M. Z. (2017). New ZnO/Au/ZnO multilayer field effect transistor with extended gate as a sensing membrane. Ukrainian Journal of Physics, 62 (8), 695-700. http://jnas.nbuv.gov.ua/article/UJRN-0000774524 | |
|
|
PDF