Semiconductor surface spectroscopy using transverse acousto-electric effect: Role of surface charge in photo-processes at ZnS/Si interface / Tatyanenko, N. P., Roshchina, N. N., Gromashevskii, V. L., Svechnikov, G. S., Zavyalova, L. V., Snopok, B. A. (2018)
web address of the page http://jnas.nbuv.gov.ua/article/UJRN-0000923038
Semiconductor Physics, Quantum Electronics and Optoelectronics    А - 2019 /  Issue (2018, Vol. 21, № 3)
Tatyanenko N. P., Roshchina N. N., Gromashevskii V. L., Svechnikov G. S., Zavyalova L. V., Snopok B. A.
Semiconductor surface spectroscopy using transverse acousto-electric effect: Role of surface charge in photo-processes at ZnS/Si interface
Cite:
Tatyanenko, N. P., Roshchina, N. N., Gromashevskii, V. L., Svechnikov, G. S., Zavyalova, L. V., Snopok, B. A. (2018). Semiconductor surface spectroscopy using transverse acousto-electric effect: Role of surface charge in photo-processes at ZnS/Si interface. Semiconductor Physics, Quantum Electronics and Optoelectronics , 21 (3), 263-272. http://jnas.nbuv.gov.ua/article/UJRN-0000923038 | |
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