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Growth of silicon self-assembled nanowires by using gold-enhanced CVD technology / Klimovskaya, A. I., Kalashnyk, Yu. Yu., Voroshchenko, A. T., Oberemok, O. S., Pedchenko, Yu. M., Lytvyn, P. M. (2018)
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 web address of the page http://jnas.nbuv.gov.ua/article/UJRN-0000923041 Semiconductor Physics, Quantum Electronics and Optoelectronics
      А  - 2019  /      Issue (2018,  Vol. 21, № 3) 
 Klimovskaya A. I., Kalashnyk Yu. Yu., Voroshchenko A. T., Oberemok O. S., Pedchenko Yu. M., Lytvyn P. M.Growth of silicon self-assembled nanowires by using gold-enhanced CVD technology
 
 
 Cite:Klimovskaya, A. I., Kalashnyk, Yu. Yu., Voroshchenko, A. T., Oberemok, O. S., Pedchenko, Yu. M., Lytvyn, P. M. (2018). Growth of silicon self-assembled nanowires by using gold-enhanced CVD technology. Semiconductor Physics, Quantum Electronics and Optoelectronics , 21 (3), 282-287. http://jnas.nbuv.gov.ua/article/UJRN-0000923041
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