Influence of divacancy-oxygen defects on recombination properties of n-Si subjected to irradiation and subsequent annealing / Krasko, M. M., Kolosiuk, A. G., Voitovych, V. V., Povarchuk, V. Yu., Rogutskyi, I. S. (2018)
web address of the page http://jnas.nbuv.gov.ua/article/UJRN-0000940905
Ukrainian journal of physics   А - 2018 /  Issue (2018, Vol. 63, № 12)
Kras'ko M. M., Kolosiuk A. G., Voitovych V. V., Povarchuk V. Yu., Roguts'kyi I. S.
Influence of divacancy-oxygen defects on recombination properties of n-Si subjected to irradiation and subsequent annealing
Cite:
Krasko, M. M., Kolosiuk, A. G., Voitovych, V. V., Povarchuk, V. Yu., Rogutskyi, I. S. (2018). Influence of divacancy-oxygen defects on recombination properties of n-Si subjected to irradiation and subsequent annealing. Ukrainian journal of physics, 63 (12), 1095-1104. http://jnas.nbuv.gov.ua/article/UJRN-0000940905 | |
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