Influence of intrinsic point defects and substitutional impurities (Cl, I-S) on the electronic structure of 2H-Sn2 / Bletskan, D. I., Frolova, V. V. (2018)
web address of the page http://jnas.nbuv.gov.ua/article/UJRN-0000941355
Semiconductor Physics, Quantum Electronics and Optoelectronics    А - 2019 /  Issue (2018, Vol. 21, № 4)
Bletskan D. I., Frolova V. V.
Influence of intrinsic point defects and substitutional impurities (Cl, I-S) on the electronic structure of 2H-Sn2
Cite:
Bletskan, D. I., Frolova, V. V. (2018). Influence of intrinsic point defects and substitutional impurities (Cl, I-S) on the electronic structure of 2H-Sn2. Semiconductor Physics, Quantum Electronics and Optoelectronics , 21 (4), 345-359. http://jnas.nbuv.gov.ua/article/UJRN-0000941355 | |
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