UkrainianEnglish

web address of the page http://jnas.nbuv.gov.ua/article/UJRN-0000941355
  Semiconductor Physics, Quantum Electronics and Optoelectronics        А - 2019  /     Issue (2018, Vol. 21, № 4)

Bletskan D. I., Frolova V. V.
Influence of intrinsic point defects and substitutional impurities (Cl, I-S) on the electronic structure of 2H-Sn2

Cite:
Bletskan, D. I., Frolova, V. V. (2018). Influence of intrinsic point defects and substitutional impurities (Cl, I-S) on the electronic structure of 2H-Sn2. Semiconductor Physics, Quantum Electronics and Optoelectronics , 21 (4), 345-359. http://jnas.nbuv.gov.ua/article/UJRN-0000941355

 

Institute of Information Technologies of VNLU

+38 (044) 525-36-24
libnas@nbuv.gov.ua
Ukraine, 03039, Kyiv, Holosiivskyi Ave, 3, room 209