S1/f noise and carrier transport mechanisms in InSb p + -n junctions / Tetyorkin, V. V., Sukach, A. V., Tkachuk, A. I., Trotsenko, S. P. (2018)
web address of the page http://jnas.nbuv.gov.ua/article/UJRN-0000941358
Semiconductor Physics, Quantum Electronics and Optoelectronics    А - 2019 /  Issue (2018, Vol. 21, № 4)
Tetyorkin V. V., Sukach A. V., Tkachuk A. I., Trotsenko S. P.
S1/f noise and carrier transport mechanisms in InSb p + -n junctions
Cite:
Tetyorkin, V. V., Sukach, A. V., Tkachuk, A. I., Trotsenko, S. P. (2018). S1/f noise and carrier transport mechanisms in InSb p + -n junctions. Semiconductor Physics, Quantum Electronics and Optoelectronics , 21 (4), 374-379. http://jnas.nbuv.gov.ua/article/UJRN-0000941358 | |
|
|
PDF