Electron tunneling in the germanium/silicon heterostructure with germanium quantum dots: theory / Pokutnyi, S. I., Shkoda, N. G. (2021)
UkrainianEnglish

web address of the page http://jnas.nbuv.gov.ua/article/UJRN-0001302213
  Chemistry, physics and technology of surface    А - 2022  /     Issue (2021, Т. 12, № 4)

Pokutnyi S. I., Shkoda N. G.
Electron tunneling in the germanium/silicon heterostructure with germanium quantum dots: theory

Cite:
Pokutnyi, S. I., Shkoda, N. G. (2021). Electron tunneling in the germanium/silicon heterostructure with germanium quantum dots: theory. Chemistry, physics and technology of surface, 12 (4), 306-313. http://jnas.nbuv.gov.ua/article/UJRN-0001302213

 

Institute of Information Technologies of VNLU

+38 (044) 525-36-24
libnas@nbuv.gov.ua
Ukraine, 03039, Kyiv, Holosiivskyi Ave, 3, room 209