Reduction of recombination losses in near-surface diffusion emitter layers of photosensitive silicon n+-p-p+ structures / Kostylyov V. P., Sachenko А. V., Slusar Т. V., Chernenko V. V. (2023)
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web address of the page http://jnas.nbuv.gov.ua/article/UJRN-0001449532
  Ukrainian journal of physics      А - 2018  /     Issue (2023, Vol. 68, № 9)

Kostylyov V. P., Sachenko А. V., Slusar Т. V., Chernenko V. V.
Reduction of recombination losses in near-surface diffusion emitter layers of photosensitive silicon n+-p-p+ structures

Бібліографічний опис:
Kostylyov V. P., Sachenko А. V., Slusar Т. V., Chernenko V. V. Reduction of recombination losses in near-surface diffusion emitter layers of photosensitive silicon n+-p-p+ structures. Ukrainian journal of physics. 2023. Vol. 68, № 9. С. 628-637. URL: http://jnas.nbuv.gov.ua/article/UJRN-0001449532

 

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