Formation of Mn4Si7/Si(111), CrSi2/Si(111), and CoSi2/Si(111) thin film and evaluation of their optically direct and indirect band gap / Dovranov K. T., Normuradov M. T., Davranov Kh. T., Bekpulatov I. R. (2024)
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web address of the page http://jnas.nbuv.gov.ua/article/UJRN-0001469405
  Ukrainian journal of physics      А - 2018  /     Issue (2024, Vol. 69, № 1)

Dovranov K. T., Normuradov M. T., Davranov Kh. T., Bekpulatov I. R.
Formation of Mn4Si7/Si(111), CrSi2/Si(111), and CoSi2/Si(111) thin film and evaluation of their optically direct and indirect band gap

Бібліографічний опис:
Dovranov K. T., Normuradov M. T., Davranov Kh. T., Bekpulatov I. R. Formation of Mn4Si7/Si(111), CrSi2/Si(111), and CoSi2/Si(111) thin film and evaluation of their optically direct and indirect band gap. Ukrainian journal of physics. 2024. Vol. 69, № 1. С. 20-25. URL: http://jnas.nbuv.gov.ua/article/UJRN-0001469405

 

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