Recombination and trapping of excess carriers in n-InSb / Tetyorkin V. V., Tkachuk A. I., Lutsyshyn I. G. (2024)
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web address of the page http://jnas.nbuv.gov.ua/article/UJRN-0001469408
  Ukrainian journal of physics      А - 2018  /     Issue (2024, Vol. 69, № 1)

Tetyorkin V. V., Tkachuk A. I., Lutsyshyn I. G.
Recombination and trapping of excess carriers in n-InSb

Бібліографічний опис:
Tetyorkin V. V., Tkachuk A. I., Lutsyshyn I. G. Recombination and trapping of excess carriers in n-InSb. Ukrainian journal of physics. 2024. Vol. 69, № 1. С. 45-52. URL: http://jnas.nbuv.gov.ua/article/UJRN-0001469408

 

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