X-ray diffraction study of deformation state in InGaN/GaN multilayered structures / Kladko V. P., Kuchuk A. V., Safryuk N. V., Machulin V. F., Belyaev A. E., Konakova R. V., Yavich B. S. (2010)
інтернет-адреса сторінки: http://jnas.nbuv.gov.ua/article/UJRN-0000349116
Semiconductor physics, quantum electronics & optoelectronics    А - 2019 /  Випуск (2010, Vol. 13, № 1)
Kladko V. P., Kuchuk A. V., Safryuk N. V., Machulin V. F., Belyaev A. E., Konakova R. V., Yavich B. S.
X-ray diffraction study of deformation state in InGaN/GaN multilayered structures
Cite:
Kladko, V. P., Kuchuk, A. V., Safryuk, N. V., Machulin, V. F., Belyaev, A. E., Konakova, R. V., Yavich, B. S. (2010). X-ray diffraction study of deformation state in InGaN/GaN multilayered structures. Semiconductor Physics, Quantum Electronics and Optoelectronics , 13 (1), 1-7. http://jnas.nbuv.gov.ua/article/UJRN-0000349116 | |
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