інтернет-адреса сторінки:
http://jnas.nbuv.gov.ua/article/UJRN-0000349123
Semiconductor physics, quantum electronics & optoelectronics 
А - 2019 /
Випуск (2010, Vol. 13, № 1)
Savchenko D. V., Poppl A., Kalabukhova E. N., Venger E. F., Gadzira M. P., Gnesin G. G.
Intrinsic defects in nonstoichiometric b-SiC nanoparticles studied by pulsed magnetic resonance methods
Cite:
Savchenko, D. V., Poppl, A., Kalabukhova, E. N., Venger, E. F., Gadzira, M. P., Gnesin, G. G. (2010). Intrinsic defects in nonstoichiometric b-SiC nanoparticles studied by pulsed magnetic resonance methods. Semiconductor Physics, Quantum Electronics and Optoelectronics , 13 (1), 43-50. http://jnas.nbuv.gov.ua/article/UJRN-0000349123
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