Control of photoluminescence spectra of porous nc-Si-SiOx structures by vapor treatment / Dan'ko V. A., Bratus' V. Ya., Indutnyi I. Z., Lisovskyy I. P., Zlobin S. O., Michailovska K. V., Shepeliavyi P. E. (2010)
інтернет-адреса сторінки: http://jnas.nbuv.gov.ua/article/UJRN-0000349386
Semiconductor physics, quantum electronics & optoelectronics    А - 2019 /  Випуск (2010, Vol. 13, № 4)
Dan'ko V. A., Bratus' V. Ya., Indutnyi I. Z., Lisovskyy I. P., Zlobin S. O., Michailovska K. V., Shepeliavyi P. E.
Control of photoluminescence spectra of porous nc-Si-SiOx structures by vapor treatment
Cite:
Danko, V. A., Bratus, V. Ya., Indutnyi, I. Z., Lisovskyy, I. P., Zlobin, S. O., Michailovska, K. V., Shepeliavyi, P. E. (2010). Control of photoluminescence spectra of porous nc-Si-SiOx structures by vapor treatment. Semiconductor Physics, Quantum Electronics and Optoelectronics , 13 (4), 413-417. http://jnas.nbuv.gov.ua/article/UJRN-0000349386 | |
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