Effect of low-temperature annealing on light-emitting properties of na-Si/SiOx porous nanocomposite films / Lisovskyy I. P., Litovchenko V. G., Zlobin S. O., Voitovych M. V., Khatsevich I. M., Indutnyy I. Z., Shepeliavyi P. E., Kolomys O. F. (2011)
інтернет-адреса сторінки: http://jnas.nbuv.gov.ua/article/UJRN-0000349442
Semiconductor physics, quantum electronics & optoelectronics    А - 2019 /  Випуск (2011, Vol. 14, № 1)
Lisovskyy I. P., Litovchenko V. G., Zlobin S. O., Voitovych M. V., Khatsevich I. M., Indutnyy I. Z., Shepeliavyi P. E., Kolomys O. F.
Effect of low-temperature annealing on light-emitting properties of na-Si/SiOx porous nanocomposite films
Cite:
Lisovskyy, I. P., Litovchenko, V. G., Zlobin, S. O., Voitovych, M. V., Khatsevich, I. M., Indutnyy, I. Z., Shepeliavyi, P. E., Kolomys, O. F. (2011). Effect of low-temperature annealing on light-emitting properties of na-Si/SiOx porous nanocomposite films. Semiconductor Physics, Quantum Electronics and Optoelectronics , 14 (1), 127-129. http://jnas.nbuv.gov.ua/article/UJRN-0000349442 | |
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