Technique and setup for diagnostics of p-n junction to case thermal resistance in high-power gallium nitride LEDs / Sorokin V. M., Konakova R. V., Kudryk Ya. Ya., Zinovchuk A. V., Bigun R. I., Kudryk R. Ya., Shynkarenko V. V. (2012)
інтернет-адреса сторінки: http://jnas.nbuv.gov.ua/article/UJRN-0000350128
Semiconductor physics, quantum electronics & optoelectronics    А - 2019 /  Випуск (2012, Vol. 15, № 2)
Sorokin V. M., Konakova R. V., Kudryk Ya. Ya., Zinovchuk A. V., Bigun R. I., Kudryk R. Ya., Shynkarenko V. V.
Technique and setup for diagnostics of p-n junction to case thermal resistance in high-power gallium nitride LEDs
Cite:
Sorokin, V. M., Konakova, R. V., Kudryk, Ya. Ya., Zinovchuk, A. V., Bigun, R. I., Kudryk, R. Ya., Shynkarenko, V. V. (2012). Technique and setup for diagnostics of p-n junction to case thermal resistance in high-power gallium nitride LEDs. Semiconductor Physics, Quantum Electronics and Optoelectronics , 15 (2), 124-128. http://jnas.nbuv.gov.ua/article/UJRN-0000350128 | |
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